Complete Au-free Metallization Platform for UWBG Al 0.65 Ga 0.35 N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates
physics.app-ph
Submitted: 2026-10-29
Updated: 2026-10-29
Related papers
- The role of distributed friction dynamics on heave-induced motion of offshore drilling systems: modelling, analysis, and simulations
- In-situ tunable superconducting diode: towards field-free operation with infinite nonreciprocity
- Correlation Imaging via Hybrid Entanglement between Microwave Photons and Surface Acoustic Wave Phonons
- Orbital-coherence memory in electrical transport and its self-consistent Maxwell response
- Time-Domain Analysis of Surface Acoustic Wave Magnetoelectric Sensors
- The Micromechanical Measurement of Photothermal Expansion