Efficient Simulation of Gate Leakage Currents in Ultra-scaled Transistors from First Principles
cond-mat.mtrl-sci
Submitted: 2026-10-29
Updated: 2026-10-29
Related papers
- Machine-learned exchange-correlation functionals for molecules, solids, and reactive surfaces
- Efficient Large-Scale STEM-EELS Simulations With Torched-TACAW
- Mode-selective electron-phonon coupling drives charge density waves in the kagome metals YRu 3 Si 2 and LaRu 3 Si 2
- Direct Raman observation of the quantum metric in a quantum magnet
- Restoring the Surface Magnetic Gap in MnBi 2 Te 4
- ATLAS: A Foundation Neural Sampler for Amorphous Materials