High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide

arXiv:2610.32642 · cond-mat.mtrl-sci, quant-ph · Submitted 2026-10-23 · Read on arXiv

cond-mat.mtrl-sci, quant-ph

Submitted: 2026-10-23

Updated: 2026-10-23

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