Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization

Due to strong spin-orbit coupling, large Landé g-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platform for the exploration of topological superconductivity in hybrid semiconductor-superconductor heterostructures. Reduction of disorder in the semiconductor remains a primary challenge to the disambiguation of subtle interaction effects. Here we demonstrate very high mobility InAs 2DEGs grown on insulating InP substrates. Utilizing a convex compositional grading profile in an InAlAs metamorphic buffer we demonstrate InAs quantum wells with thickness greater than 10 nm without need of Ga-containing cladding layers. We examine structural and electrical transport properties of these heterostructures. Advances in the design of the metamorphic InAlAs buffer result in low-temperature electron mobility exceeding 1.7 times10 6 cm squared V-1 s-1 at 2DEG density at most3.2 times10 11 cm-2, the highest value yet reported for this material system.