On the In xGa 1-xAs channel noise in InP HEMTs from 4 K to 300 K

arXiv:2607.04757 · cond-mat.mes-hall, physics.app-ph · Submitted 2026-07-06 · Read on arXiv

cond-mat.mes-hall, physics.app-ph

Submitted: 2026-07-06

Updated: 2026-08-28

Journal ref: IEEE Journal of the Electron Devices Society, vol. 14, pp. 820-827, 2026

DOI: 10.1109/JEDS.2026.3730543

License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/

Terminology

• Accuracy — 3× in this paper · explained in 1 episode
• MTT-S International Microwave Symposium — 3× in this paper
• Trace — 3× in this paper · explained in 2 episodes

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