Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures

arXiv:2506.05548 · cond-mat.mes-hall, cond-mat.other · Submitted 2025-06-05 · Read on arXiv

cond-mat.mes-hall, cond-mat.other

Submitted: 2025-06-05

Updated: 2025-06-05

Terminology

• Alignment — 2× in this paper · explained in 1 episode
• Hysteresis — 2× in this paper · explained in 3 episodes

Sources

• Stacking-induced ferroelectricity in tetralayer graphene
• Anomalous Gate-tunable Capacitance in Van der Waals Heterostructures
• Electronic ratchet effect in a moir'e system: signatures of excitonic ferroelectricity

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