Gate-Switchable Josephson Diode Effect in Graphene via Magnetochiral Anisotropy
The research investigates a graphene Josephson junction to realize a gate-switchable Josephson diode effect driven by magnetochiral anisotropy. By using electrostatic gating to switch graphene doping from n-type to p-type, the critical current's sign reverses. Furthermore, the efficiency of this nonreciprocal transport can be continuously tuned from zero up to about 40% through gate control. This demonstrates a unique, highly tunable diode characteristic of Dirac fermions.