Reducing strain fluctuations in quantum dot devices by gate-layer stacking
The study investigated strain fluctuations in quantum dots caused by lattice mismatch and material contraction. By stacking multiple gate layers and tuning their thicknesses, researchers found a way to exploit the crossover between gate-driven and oxide-driven behaviors. This stacking method effectively suppresses short-range strain fluctuations, suggesting that careful strain engineering is crucial for improving qubit uniformity.