Multi-Branch Transport in a Back-gated WS 2 Transistor at Deep-Cryogenic Temperature
Researchers characterized a back-gated WS2 transistor down to 20 mK and found it exhibits reproducible multi-stage turn-on behavior. This behavior is modeled by multiple parallel conduction branches, indicating transport is governed by several effective paths. This demonstrates strong gate tunability and low leakage even at millikelvin temperatures.