Numerically exact simulation of photo-doped Mott insulators
The authors used numerically exact Quantum Monte Carlo and a time-local ansatz to study long-lived photo-doped states in Mott insulators. They found that the Mott gap remains robust even with large photo-doping, revealing hole and electron quasiparticles with strongly renormalized properties. This method allows access to quasi-stable phases beyond the limits of standard real-time simulations.