Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision
This study introduces D-DLAT, a novel laser transfer method for micro-LEDs that directly ablated a polyimide release layer to actively push chips toward the receiver using an ablation shockwave. Unlike traditional methods, D-DLAT achieves high speed and precision across a wide range of chip sizes (600µm down to 35µm) with minimal placement error (<1µm) and large gap tolerance (up to 50µm). This enables complex patterned transfers necessary for advanced displays.