Thin-capping layer epitaxial quantum dots for near-field quantum photonics
Researchers investigated if reducing InAs/GaAs quantum dot capping layer thickness preserves high optical quality for near-field quantum photonics. They found that QDs with 10 nm and 20 nm capping layers maintained narrow emission linewidths and similar excitonic lifetimes to thicker structures, suggesting thin-capping is viable for exploring light-matter interactions.