Disorder mediated fully compensated ferrimagnetic spin-gapless semiconducting behaviour in Cr3Al Heusler alloy
Researchers investigated Cr3Al, a chemically disordered Heusler alloy, to find a material exhibiting both spin-gapless semiconducting transport and fully compensated ferrimagnetism simultaneously. The study confirmed that this coexistence occurs in the fully A2-disordered structure. This discovery suggests that chemical disorder can stabilize functional electronic and magnetic states for advanced spintronic applications.