Growth and Transport Properties of InAsSb Nanoflags
Researchers successfully grew high-quality, free-standing InAsSb nanoflags with dimensions around 2000 nm long. These nanoflags exhibit a large Landé g-factor and mobility comparable to top InAs/InSb structures. The study also found surface Fermi level pinning, suggesting InAsSb is an excellent candidate for coupling to superconductors while retaining desirable quantum material features.