Spectral diffusion of phosphorus donors in silicon at high magnetic field
The episode discusses a paper characterizing the phase memory time (spectral diffusion time, TSD) of phosphorus donor electron spins in silicon under high magnetic fields and varying optical excitation conditions. Hosts discuss how TSD changes with magnetic field and light, highlighting a surprising increase in TSD under above-bandgap excitation. The research suggests spectral diffusion is a tunable feature requiring dynamic modeling for designing robust quantum systems.