Towards 4D modelisation of thermal-field emission from semiconductors
This work develops a 3D model for thermal-field emission (TFE) from semiconductors, moving beyond 1D and 2D limitations. The model self-consistently solves coupled equations describing the electric field, band structure, charge distribution, and temperature. It successfully reproduces characteristic non-linear current curves and shows that saturation is due to Fermi level changes rather than field enhancement drops.