Robust Excitonic Coherence Driven by In-Plane Anisotropy in a van der Waals Semiconductor

Name: Robust Excitonic Coherence Driven by In-Plane Anisotropy in a van der Waals Semiconductor
Uploaded: 2026-10-11T02:21:55.061608+00:00
Duration: 295 s
Description: Researchers measured coherence time (T2) and population decay times (T1) for anisotropic excitons in rhenium disulfide ($ ext{ReS}_2$). They found these excitons are extremely robust against optical density and temperature, supporting a direct band gap structure regardless of layer thickness. This suggests $ ext{ReS}_2$ offers monolayer-like properties with multilayer robustness.

Researchers measured coherence time (T2) and population decay times (T1) for anisotropic excitons in rhenium disulfide ($ ext{ReS}_2$). They found these excitons are extremely robust against optical density and temperature, supporting a direct band gap structure regardless of layer thickness. This suggests $ ext{ReS}_2$ offers monolayer-like properties with multilayer robustness.

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