Hydrogen plasma-assisted atomic layer epitaxy of superconducting titanium nitride
Hydrogen plasma-assisted atomic layer deposition (HPA-ALD) was developed to grow high-quality superconducting titanium nitride (TiN) films. This method uses a hydrogen plasma step to clean the surface and remove impurities, leading to highly ordered, epitaxial films suitable for quantum technologies. The resulting TiN exhibited favorable superconducting properties with a transition temperature of 2.2 K.