Hot-Carrier Distribution Spectroscopy by Transconductance in Two-Dimensional Field-Effect Transistors
The research shows that transconductance in 2D FETs probes carrier distribution shape, not just density. By decomposing gm into density-related and shape-driven terms, researchers found an anomalous peak at a specific gate voltage that constrains hot-carrier energy (E0) and spectral width (sigma). This allows for all-electrical spectroscopy of non-equilibrium carrier distributions.