Demonstration of Robust Chiral Edge Transport in Field-Induced Chern Insulator MnBi2Te4 Devices with Engineered Geometric Defects
Researchers tested if chiral edge states in MnBi2Te4 Chern insulators could survive severe structural damage. They used atomic force microscopy to create physical cuts in the material and found that key properties like quantized Hall resistance and vanishing longitudinal resistance remained intact. This proves these topological transport features are robust against geometric defects, making them promising for fault-tolerant quantum devices.