Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Researchers engineered Si/SiGe quantum wells by growing increasingly thin layers with intentionally diffused interfaces to tune germanium concentration. This tuning enhanced electron valley splitting, a key property for spin qubits, even though it increased electrical disorder. The study establishes a linear link between valley splitting in the two-dimensional electron gas (2DEG) and simulated quantum dot behavior.